Lin R.-MSI-CHEN LEE2023-06-092023-06-091997214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031098735&doi=10.1143%2fjjap.36.984&partnerID=40&md5=964dd5c70bf6174cc30f030eb9c2c669https://scholars.lib.ntu.edu.tw/handle/123456789/632331A novel in situ method to monitor the InAs epilayer surface roughness by using pyrometer reading is proposed. The variation of pyrometer reading can be related to the surface morphology of the InAs epilayer deposited on GaAs, and provides an easy way for rapid calibration of growth conditions. The atomic force microscope is applied to measure the surface roughness which verifies the correlation between InAs epilayer morphology and the pyrometer reading.InAs; Molecular beam epitaxy; Pyrometer; Surface morphology[SDGs]SDG4Surface morphology monitoring; Atomic force microscopy; Epitaxial growth; Heat radiation; Molecular beam epitaxy; Morphology; Pyrometers; Semiconducting gallium arsenide; Substrates; Surface roughness; Semiconducting indium compoundsjournal article10.1143/jjap.36.9842-s2.0-0031098735