Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

JIAN-JANG HUANGYUH-RENN WU2018-09-102018-09-102011-02http://scholars.lib.ntu.edu.tw/handle/123456789/365011Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturingjournal article10.1109/led.2010.2093503