Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7

Huang, Y.-S.Y.-S.HuangLu, F.-L.F.-L.LuYe, H.-Y.H.-Y.YeTsou, Y.-J.Y.-J.TsouLiu, Y.-C.Y.-C.LiuTu, C.-T.C.-T.TuCHEE-WEE LIU2021-02-222021-02-222019https://www.scopus.com/inward/record.url?eid=2-s2.0-85072121530&partnerID=40&md5=79c2c2772c9793ce82466cb105c33d16https://scholars.lib.ntu.edu.tw/handle/123456789/549172Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7conference paper10.1109/VLSI-TSA.2019.88046982-s2.0-85072121530