Dept. of Electr. Eng., National Taiwan Univ.Lin, Ching-FuhChing-FuhLinSu, Yi-ShinYi-ShinSuWu, Bing-RueyBing-RueyWu2007-04-192018-07-062007-04-192018-07-06May-01http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021294http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021294/1/00947752.pdfSummary form only given. Sumary form only given. Broadband characteristics are important for optical communication. This work reports the study on the design of MQWs for broadband semiconductor lasers/amplifiers. The study shows that, with properly designed sequence of nonidentical MQWs made of InGaAsP/InP materials, the emission bandwidth could be nearly 300 nm. Using the designed MQWs as the laser gain material, the external-cavity semiconductor laser exhibits an extremely broadband tuning range, covering from 1300 nm to 1540 nm.application/pdf258496 bytesapplication/pdfen-US[SDGs]SDG7conference paper10.1109/CLEO.2001.947752http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021294/1/00947752.pdf