Yeh, K.-L.K.-L.YehJeng, M.-J.M.-J.JengJENN-GWO HWU2018-09-102018-09-101999https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033101293&doi=10.1016%2fS0038-1101%2898%2900284-6&partnerID=40&md5=fcaea24565d6e41fa14ae615ffe6680chttp://scholars.lib.ntu.edu.tw/handle/123456789/347707Room temperature deposition in H2SiF6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics. © 1999 Elsevier Science Ltd. All rights reserved.Deposition; Fluorine; Optimization; Oxidation; Oxides; Fluorinated thin gate oxides; Furnace oxidation (FO); Liquid phase depositions (LPD); ULSI circuitsjournal article10.1016/S0038-1101(98)00284-6