Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ.LUNG-HAN PENGChuang, C.-W.C.-W.ChuangHsu, Y.-C.Y.-C.HsuHo, J.-K.J.-K.HoHuang, C.-N.C.-N.HuangChen, C.-Y.C.-Y.Chen2007-04-192018-07-052007-04-192018-07-051998-05http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021814https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031633250&doi=10.1109%2fcleo.1998.675987&partnerID=40&md5=6c1d56bf8946ac18dab7560d63f1480eThe use of deep ultraviolet irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium is nitride is presented. Study indicates that the hydration effect plays an important roles in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide and phosphorous acid solutions at pH = 14.25 and 0.75, respectively.application/pdf208546 bytesapplication/pdfen-USEtching; Hydration; Irradiation; Mathematical models; Oxidation; pH; Phosphoric acid; Photochemical reactions; Potassium compounds; Reaction kinetics; Solutions; Ultraviolet radiation; Energy dispersion x ray analysis; Gallium nitride; Hydration model; Peaking effect; pH dependence; Photoelectrochemical etching; Potassium hydroxide; Wet chemical etching; Semiconducting gallium compoundsconference paper10.1109/CLEO.1998.6759872-s2.0-0031633250http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021814/1/00675987.pdf