Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing

JENN-GWO HWU2018-09-102018-09-101994https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028462230&doi=10.1143%2fJJAP.33.L916&partnerID=40&md5=a07c1c86bab1a9e49c31bde76e8d0fe2Repeated rapid thermal N2O annealing is proposed as a new gate oxide preparation method for n-channel metal- oxide-semiconductor field-effect transistors (n-MOSFET’s). It is found that the n-MOSFET’s with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N2O -annealed gate oxides. © 1994 IOP Publishing Ltd.Gate oxide; MOSFET; N2O annealing; Radiation hardness; Rapid thermal annealingAnnealing; Degradation; Diffusion; Gates (transistor); Nitrogen; Oxides; Radiation; Semiconductor growth; Field effect mobility; Gate oxide preparation; Radiation hardness; Radiation induced degradation; Rapid thermal annealing; Transconductance; MOSFET devicesReduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealingjournal article10.1143/JJAP.33.L9162-s2.0-0028462230