High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

Shi, J.-W.J.-W.ShiSheu, J.-K.J.-K.SheuChen, C.-H.C.-H.ChenLin, G.-R.G.-R.LinGONG-RU LIN2020-06-112020-06-112008https://scholars.lib.ntu.edu.tw/handle/123456789/499999[SDGs]SDG7High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined aperturesjournal article10.1109/LED.2007.9140702-s2.0-39549121046https://www.scopus.com/inward/record.uri?eid=2-s2.0-39549121046&doi=10.1109%2fLED.2007.914070&partnerID=40&md5=ae6b18bbc6c3bddd13f36cd05bc71838