Hwang, J. S.J. S.HwangTyan, S. L.S. L.TyanChou, W. Y.W. Y.ChouLee, M. L.M. L.LeeWeybume, D.D.WeybumeHang, Z.Z.HangLee, T. L.T. L.LeeLin, Hao-HsiungHao-HsiungLin2009-02-042018-07-062009-02-042018-07-061994https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028444199&doi=10.1063%2f1.111294&partnerID=40&md5=c5807e3682964f22bfc0e9d36e302418We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.en-USAluminum; Calculations; Composition effects; Curve fitting; Electric fields; Electron energy levels; Energy gap; Molecular beam epitaxy; Oscillations; Franz Keldysh oscillations; Photoreflectance; Schottky barrier; Surface Fermi level; Surface intrinsic structures; Semiconducting indium compoundsjournal article10.1063/1.1112942-s2.0-0028444199