L. B. YoungJ. LiuY.-H. G. LinH.-W. WanY.-T. ChengJ. KwoMINGHWEI HONG2024-10-232024-10-232023-04-17https://scholars.lib.ntu.edu.tw/handle/123456789/722320We have achieved subthreshold slope (SS) values close to the thermal limited values in GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). The low interfacial trap density (Dit) at the in-situ prepared Y2O3/GaAs(001) has attributed to these low SS values of 63 mV/dec at 300 K and 18 mV/dec at 77 K, respectively. The SS value of our GaAs MOSFETs at 77 K is comparable to those of the SiO2/Si MOSFETs at 77 K and InGaAs high-electron-mobility transistors (HEMTs) at 5K, suggesting the GaAs MOSFETs for cryogenic low-power application.conference paper10.1109/vlsi-tsa/vlsi-dat57221.2023.10134031