Enhancement of electrical characteristics and reliability in crystallized ZrO <inf>2</inf> gate dielectrics treated with in-situ atomic layer doping of nitrogen

Huang, J.-J.J.-J.HuangHuang, L.-T.L.-T.HuangTsai, M.-C.M.-C.TsaiLee, M.-H.M.-H.LeeChen, M.-J.M.-J.ChenMIIN-JANG CHEN2020-05-122020-05-122014https://scholars.lib.ntu.edu.tw/handle/123456789/491754Enhancement of electrical characteristics and reliability in crystallized ZrO <inf>2</inf> gate dielectrics treated with in-situ atomic layer doping of nitrogenjournal article10.1016/j.apsusc.2014.03.0392-s2.0-84899993001https://www.scopus.com/inward/record.uri?eid=2-s2.0-84899993001&doi=10.1016%2fj.apsusc.2014.03.039&partnerID=40&md5=75ec35be92a9e029c1f64284ea9a431b