CHING-FUH LINMIIN-JANG CHENChang, Shu-WeiShu-WeiChangChung, Peng-FeiPeng-FeiChungLiang, Eih-ZheEih-ZheLiangSu, Ting-WienTing-WienSuCHEE-WEE LIU2009-03-182018-07-062009-03-182018-07-06200100036951http://ntur.lib.ntu.edu.tw//handle/246246/145928http://ntur.lib.ntu.edu.tw/bitstream/246246/145928/1/36.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0035952837&doi=10.1063%2f1.1359138&partnerID=40&md5=10c37212a4cff285552ba342ff04da8dRoom temperature electroluminescence (EL) corresponding to Si band gap energy is observed from mechanically pressed indium-tin-oxide (ITO)/Si contact. The intensity of luminescence is pressure dependent and highly related to the current-voltage characteristics. Increasing pressure simultaneously reduces the rectification property and the luminescence. The physical reason for EL is attributed to the formation of an air gap between the ITO and the Si substrate. The role of the air gap is similar to the oxide layer in the metal-oxide-semiconductor structure. The influence of surface quality of the Si substrate on the luminescence spectrum is also studied, and found to be significant. © 2001 American Institute of Physics.application/pdf50064 bytesapplication/pdfen-USjournal article10.1063/1.13591382-s2.0-0035952837http://ntur.lib.ntu.edu.tw/bitstream/246246/145928/1/36.pdf