Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion

JENN-GWO HWU2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84918552801&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/391185Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletionjournal article10.1504/IJNT.2015.066190