Chen J.Z.Yeh C.-Y.Chiu I.-C.Cheng I.-C.Huang J.-J.Chen Y.-P.JIAN-ZHANG CHEN2019-09-262019-09-262009978160511126102729172https://scholars.lib.ntu.edu.tw/handle/123456789/425211We analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 ¢XC, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ?2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs. ? 2009 Materials Research Society.conference paper2-s2.0-77951106713https://www2.scopus.com/inward/record.uri?eid=2-s2.0-77951106713&partnerID=40&md5=4c23f8268480fc104a4244a947460582