陳文山2006-07-252018-06-282006-07-252018-06-282002http://ntur.lib.ntu.edu.tw//handle/246246/11823本研究計畫針對新竹工業園區及其鄰近地區之新城斷層與新竹斷層,進行地 震地質學的調查分析工作,希望藉此能了解此二斷層系統在此區域中空間上的確 實分布,也希望能進一步探討斷層系統的古地震記錄,以及其近期的活動性,這 些結果應能提供科學園區未來發展與土地利用上最重要的資訊。 本研究的主要研究項目有五:(1)構造地形分析;(2)新城斷層古地震研究; (3)新城斷層淺層震測探勘;(4)地震震源空間分布之探討;(5)初步大地測量測點 選擇與設置。構造地形分析利用數值地形、航空照片、衛星影像、野外調查,重 新繪製了新竹地區地形面及構造崖的分布圖,並證實新竹與新城兩斷層都有近期 的活動。新城斷層之古地震研究,得知園區所在地形面,已為新城斷層錯斷,基 盤垂直位移至少18m 。地震震源位置分布研究,說明了現階段新竹與新城兩斷層 都無活動,也間接證明了此二斷層有同震活動的可能。淺層震測研究大致了解新 城斷層在篤行營區中的出露位置。大地測量部分完成了新竹地區的布點,預計2004 年年底會有初步觀察結果。This study applied different methods of earthquake geology to work on the active-fault systems located in and surrounding the Scientific Industrial Park of Hsinchu. The objectives of this project are to understand the spatial distribution of the active-fault systems, to dig out their paleo-earthquake records, and to figure out their recent activity. We hope to provide essential information in land-use of Industrial Park. Five jobs have been conducted: (1) Morphotectonic analysis; (2) Paleoseismology study on Hsincheng fault; (3) Shallow seismic study on Hsincheng fault; (4) Spatial analysis on the hypocenters of the background seismicities; (5) Preliminary study on geodetic survey. We used the DEM, aerial photos, satellite imagery, and field survey to remap the geomorphic surfaces and tectonic scarps. The results show both of Hsinchu and Hsincheng fault have recent activities. Paleoseismology study gives a cumulative vertical-slip of least 18m. Shallow seismic survey works out the surface trace in the Tuhsin military base. Hypocenter distribution further suggest that above-mentioned two active fault are both aseismic over the past ten years, indicating the faults are probably coseismic-reactivated. The purpose of geodectic study is to monitor the very recent behaviors of the active faults. The final result will come up in two years till the end of 2004.application/pdf2321001 bytesapplication/pdfzh-TW國立臺灣大學地質科學系暨研究所新竹科學園區活動斷層地震地質學研究reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/11823/1/912119M002010.pdf