Liu, Yun HaoYun HaoLiuLiao, Yu TzuYu TzuLiaoJIAN-JANG HUANGYUH-RENN WU2023-07-172023-07-172022-01-019781665453400https://scholars.lib.ntu.edu.tw/handle/123456789/633750In this work, the design of double heterojunction bipolar transistors (DHBTs) is to improve the unit current gain cutoff frequency (fT). We proposed using a compositionally graded emitter and adding a ledge layer between the base and the emitter to enhance fT. These results exhibit the high fT of these DHBTs.current gain | fT | graded emitter | graded InGaAsSb base | InP DHBTs | ledge layerconference paper10.1109/CSW55288.2022.99301182-s2.0-85142653232https://api.elsevier.com/content/abstract/scopus_id/85142653232