High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics

Lin, T.D.T.D.LinChiu, H.C.H.C.ChiuChang, P.P.ChangTung, L.T.L.T.TungChen, C.P.C.P.ChenMINGHWEI HONGKwo, J.J.KwoTsai, W.W.TsaiWang, Y.C.Y.C.Wang2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443417[SDGs]SDG7High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectricsjournal article10.1063/1.29563932-s2.0-48249114071https://www.scopus.com/inward/record.uri?eid=2-s2.0-48249114071&doi=10.1063%2f1.2956393&partnerID=40&md5=40e09a11fefa0523f874ef6116fa1ef6