Pei, Ting-HangTing-HangPeiTsai, Kuen-YuKuen-YuTsaiLi, Jia-HanJia-HanLiCheng, I-ChunI-ChunCheng2018-09-102018-09-102010-08https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955735379&doi=10.1063%2f1.3478013&partnerID=40&md5=1e1ad57d1547c4a98b4a4aa035ddf767Extreme-ultraviolet (EUV) light is used to inspect the Si photomask by analyzing the reflective photons. We demonstrated the re-emitting EUV photons from the flat Si surface and a two-dimensional semicircular Si defect by using the Monte Carlo method with a Gaussian phase function, respectively. The results of a model based on the Feynman path integral matches those of the Monte Carlo method very well by multiplying a correction function. The intensity of re-emitting photons from the defect can offer enough signals at the angle intersecting the surface less than 20°. © 2010 American Institute of Physics.Correction function; Defect inspection; Extreme ultraviolets; Feynman path integrals; Gaussians; Model-based; Phase functions; Photon propagation; Re-emitting; Si surfaces; Stochastic simulations; Defects; Photons; Silicon; Two dimensional; Monte Carlo methodsjournal article10.1063/1.34780132-s2.0-77955735379WOS:000280940900008