Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

Shi, J.-W.J.-W.ShiChiu, P.-H.P.-H.ChiuHuang, F.-H.F.-H.HuangWu, Y.-S.Y.-S.WuLu, Ja-YuJa-YuLuSun, C.-K.C.-K.SunLiu, C.-W.C.-W.LiuChen, P.-S.P.-S.Chen2009-03-252018-07-062009-03-252018-07-062006http://ntur.lib.ntu.edu.tw//handle/246246/148240application/pdf217703 bytesapplication/pdfen-USSi/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performancejournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148240/1/69.pdf