2011-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/705720摘要：憶阻器是由於是最新的第四代基本被動元件的電路設計，並有可能廣泛的實際使用在電子產品中而被學研界高度重視。L. Chua 所開發的數學模式，使憶阻器的使用範圍更為廣泛。由於奈米技術的發展，憶阻器的研製生產可望徹底提升目前非揮發性元件、邏輯電路、神經網絡元件，高功率元件，防震波器件，信息安全系統等系統的性質。最近，研究自旋極化電流來激發磁壁與磁化動力學的快速發展導致一些更具體的自旋憶阻器的新理論與設計紛紛提出。本研究課題旨在結合實驗和理論研究來徹底分析在自旋電子結構內自旋轉移對憶阻器行為的影響。在整合台俄間的理論與實驗和技術經驗的團隊共同研發此一重要的基礎自旋行為與應用電子元件，預期其成果將在對此課題有重大的影響並可望超越目前最先進的自旋電子學憶阻器的瓶頸。<br> Abstract: Great attention to the memristor is caused by its fundamental importance as the fourth basic passive element in circuit design, and by wide possibilities for practical application in electronics. L.Chua has developed mathematical formalism that allows to use memristors for a wide range of applications. Development of the nanoscale memristor production technology is expected to get radically improved the performance of such devices as multibit nonvolatile memory and logic, neurochips, power electronics devices, shock-resistive circuits, information security systems, etc. Recently, several schemes of spintronic memristor have been proposed, based on the excitation of magnetization dynamics by spin-polarized current. Our project aims to the integrated experimental and theoretical study of spin-transfer memristive effect in spintronic structures. The synergy between the theoretical, experimental and technological experiences of the collaborating teams of the project will allow to make a significant progress beyond the state-of-the-art in both fundamental and applied memristor related spintronics.自旋力矩注入自旋力矩操控憶阻器自旋電子學Spin-torque injectionspin torque-drivenmemristorspintronics