MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate

Zhang, X.X.ZhangChua, S. J.S. J.ChuaFeng, Z. C.Z. C.FengChen, J.J.ChenLin, J.J.Lin2010-09-022018-07-052010-09-022018-07-051999-01http://ntur.lib.ntu.edu.tw//handle/246246/193713en-USMOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substratejournal article10.1002/(SICI)1521-396X(199911)176:1<605::AID-PSSA605>3.0.CO;2-Q