Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

CHEE-WEE LIULiu, C.W.C.W.LiuSturm, J.C.J.C.SturmCHEE-WEE LIU2018-09-102018-09-101997http://www.scopus.com/inward/record.url?eid=2-s2.0-0001627677&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332400Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristicsjournal article