Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As

Wu, Y.D.Y.D.WuLin, T.D.T.D.LinChiang, T.H.T.H.ChiangChang, Y.C.Y.C.ChangChiu, H.C.H.C.ChiuLee, Y.J.Y.J.LeeMINGHWEI HONGLin, C.A.C.A.LinKwo, J.J.Kwo2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443390Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> Asconference paper10.1116/1.32711412-s2.0-84905950827https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905950827&doi=10.1116%2f1.3271141&partnerID=40&md5=fd2feddd6b1b4578294622106547f0df