Hsiao Y.-J.Lu C.-H.Fang T.-H.2019-05-132019-05-1320131110662Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/407381The ZnS/CuInGaSe 2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS 2 phase was also found in the CuInGaSe 2 /Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 £[. The efficiency of the devices improved from 8.12 to 9.50%. ? 2013 Yu-Jen Hsiao et al.[SDGs]SDG7To enhance performance of light soaking process on ZnS/CuIn 1-x GaxSe 2 solar celljournal article10.1155/2013/5619482-s2.0-84890056580https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890056580&doi=10.1155%2f2013%2f561948&partnerID=40&md5=baf858266aed2a559b88dfe255469670