Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability

Li S.-LLee M.-XYen C.-CChen T.-LChou C.-HCHEE-WEE LIU2021-09-022021-09-022021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108180566&doi=10.1109%2fVLSI-TSA51926.2021.9440093&partnerID=40&md5=2c9202acf3b9450a38fcd3e1eeb03312https://scholars.lib.ntu.edu.tw/handle/123456789/580614Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliabilityconference paper10.1109/VLSI-TSA51926.2021.94400932-s2.0-85108180566