Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector

Liu, P. D.P. D.LiuShieh, T. H.T. H.ShiehWu, Ming-YenMing-YenWuChang, T. C.T. C.Chang李嗣涔林浩雄Lee, Si-ChenSi-ChenLeeLin, Hao-HsiungHao-HsiungLin2009-01-222018-07-052009-01-222018-07-051991http://ntur.lib.ntu.edu.tw//handle/246246/108303Yokohamaen-USHeavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detectorconference paper