H.-H. LinY.-K. LinC. HuVITA PI-HO HU2020-10-072020-10-07202000189383https://scholars.lib.ntu.edu.tw/handle/123456789/516582https://www.scopus.com/inward/record.uri?eid=2-s2.0-85085566946&doi=10.1109%2fTED.2020.2986793&partnerID=40&md5=117c5a3ec0908d20dbae0b7b043b5f95We investigate the GaAs0.51Sb0.49/In0.53Ga0.47As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling. Negative capacitance enhances vertical tunneling more significantly than corner tunneling due to the amplified vertical electric field. By TCAD optimization of the device, small {I}_{{\mathrm {OFF}}} (10 pA/ \mu \text{m} ) and large {I}_{\text{ON}} ( 405~\mu \text{A}/\mu \text{m} ) at {V}_{\text {DD}} = {0.5} V with 14 mV/dec sub- {V}_{\text {t}} swing over 4 dec of current were obtained. Even at {V}_{\text {DD}} ={0.1} V, the optimized NCVT-FET has 10 pA/ \mu \text{m}~{I}_{\text{OFF}} , 5.86~\mu \text{A}/\mu \text{m}~{I}_{\text{ON}} ( 144\times higher than the nominal TFET), and {I}_{\text{ON}}/{I}_{\text{OFF}} ratio of {6} \times {10}^{{5}}. © 1963-2012 IEEE.Ferroelectric (FE); Heterojunction; Negative capacitance (NC); Tunnel FET (TFET)Electric fields; Field effect transistors; Negative capacitance; Tunnel FET; Vertical electric fields; Vertical tunneling; Capacitancejournal article10.1109/ted.2020.29867932-s2.0-85085566946