Chuang, K.-C.K.-C.ChuangJENN-GWO HWU2018-09-102018-09-102006https://www.scopus.com/inward/record.uri?eid=2-s2.0-33845434981&doi=10.1063%2f1.2402215&partnerID=40&md5=1c21ead2652df976a6e03a79fffd7d97http://scholars.lib.ntu.edu.tw/handle/123456789/321871The authors perform a simple technique for the improvements in both current density reliability of high- k Al2 O3 gate dielectrics. An Al2 O3 was prepared by chemical oxidation at an appropriate electrical field in nitric acid at room temperature then furnace annealed at 650 °C in N2. The interface trap-induced capacitance was used to investigate the interfacial property between the gate dielectric Si substrate. On the other hand the stress induced leakage current (SILC) was measured for characterizing the property of bulk oxide. It was found that the electrical characteristics of bulk oxide including leakage breakdown field SILC, were much improved without sacrificing interfacial property. The improvement can be ascribed to the compensation oxidation process. © 2006 American Institute of Physics.Alumina; Annealing; Electric fields; Electric properties; Leakage currents; Oxidation; Interfacial properties; Room temperature; Stress induced leakage current (SILC); Dielectric materialsjournal article10.1063/1.2402215