High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy

Wu, C.C.C.C.WuLu, S.S.S.S.LuLee, S.C.S.C.LeeWilliamson, F.F.WilliamsonNathan, M.I.M.I.NathanSHEY-SHI LU2018-09-102018-09-101992http://www.scopus.com/inward/record.url?eid=2-s2.0-0026970514&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298343High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxyconference paper