Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As

Lin, T.D.T.D.LinWu, Y.D.Y.D.WuChang, Y.C.Y.C.ChangChiang, T.H.T.H.ChiangChuang, C.Y.C.Y.ChuangLin, C.A.C.A.LinChang, W.H.W.H.ChangChiu, H.C.H.C.ChiuTsai, W.W.TsaiKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443392http://scholars.lib.ntu.edu.tw/handle/123456789/349401[SDGs]SDG7Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>Asconference paper10.1109/DRC.2009.53548732-s2.0-76549129517https://www.scopus.com/inward/record.uri?eid=2-s2.0-76549129517&doi=10.1109%2fDRC.2009.5354873&partnerID=40&md5=9c051b3014406504a91d42f6e9d5492c