High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

MINGHWEI HONG2018-09-102018-09-102010http://scholars.lib.ntu.edu.tw/handle/123456789/357449High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinningreport