CHING-FUH LINLiang, Eih-ZheEih-ZheLiangSu, Ting-WienTing-WienSuHsieh, Hsing-HungHsing-HungHsiehWEI-FANG SUMIIN-JANG CHEN2007-04-192018-07-052007-04-192018-07-052002http://www.scopus.com/inward/record.url?eid=2-s2.0-0036361198&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/300095http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021011/1/01031384.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036455640&partnerID=40&md5=9d2c9a8f225214403079b31f2f4bf9d6The light sources for photonic circuitry based on silicon were discussed. It was found that the carrier localization could enhance radiative recombination corresponding to bandgap energy of silicon for orders of magnitudes. The lasing actions corresponding to silicon bandgap energy were observed with the enhanced radiative recombination.application/pdf262038 bytesapplication/pdfCrystals; Energy gap; Light sources; MOS devices; Phonons; Photons; Semiconducting silicon; Photonic crystals; Electrooptical devicesconference paper10.1109/QELS.2002.10313842-s2.0-0036455640http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021011/1/01031384.pdf