Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si nMOSFETs with HfO<inf>2</inf> gate dielectric

Yeo, C.C.C.C.YeoCho, B.J.B.J.ChoLee, M.H.M.H.LeeLiu, C.W.C.W.LiuChoi, K.J.K.J.ChoiLee, T.W.T.W.LeeCHEE-WEE LIU2020-06-162020-06-162006https://scholars.lib.ntu.edu.tw/handle/123456789/502104Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si nMOSFETs with HfO<inf>2</inf> gate dielectricjournal article10.1088/0268-1242/21/5/0172-s2.0-33645686127https://www.scopus.com/inward/record.uri?eid=2-s2.0-33645686127&doi=10.1088%2f0268-1242%2f21%2f5%2f017&partnerID=40&md5=ff3a4d9330d037417c39b9c856a4a4ef