Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

Chen, P. S.P. S.ChenLee, S. W.S. W.LeeLee, M. H.M. H.LeeLiu, C. W.C. W.Liu2009-03-252018-07-062009-03-252018-07-062006http://ntur.lib.ntu.edu.tw//handle/246246/148244application/pdf487983 bytesapplication/pdfen-USGrowth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETsjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148244/1/73.pdf