Chen L.-W.Wang C.Liao Y.-C.Li C.-L.Chuang T.-H.CHUN-HWAY HSUEH2019-09-252019-09-25201809258388https://scholars.lib.ntu.edu.tw/handle/123456789/425044The purpose of this work was to investigate the feasibility of using sputtered Ti/W-Ti/Ti multilayer as diffusion barrier and buffer layers between £]-Zn 4 Sb 3 thermoelectric (TE) material and Ag interconnect layer for mid-temperature TE module applications. Interdiffusion at the interface was examined by both scanning electron microscope and Auger electron spectroscopy. After penetrating the Ti buffer layer, Ag, Zn and Sb were successfully blocked by the W-Ti diffusion barrier layer. We also proved that the TE sample with diffusion barrier and buffer layers showed phase stability after high temperature aging. Also, the sheet resistance decreased as the temperature increased and it indicated good electrical properties at high working temperatures. In addition, the solid-liquid interdiffusion method was used to join the TE module, and the bonding remained stable at the TE module working temperature. ? 2018 Elsevier B.V.DiffusionThermoelectric materialsThin filmsX-ray diffractionjournal article10.1016/j.jallcom.2018.05.2512-s2.0-85047414770https://www2.scopus.com/inward/record.uri?eid=2-s2.0-85047414770&doi=10.1016%2fj.jallcom.2018.05.251&partnerID=40&md5=05ea17b5369a5ac6af83f434c93772d3