Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates

CHEE-WEE LIUChen, Y.-T.Y.-T.ChenLan, H.-S.H.-S.LanHsu, W.W.HsuFu, Y.-C.Y.-C.FuLin, J.-Y.J.-Y.LinCHEE-WEE LIU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79960504385&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/365224[SDGs]SDG7Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substratesjournal article10.1063/1.3604417