林浩雄臺灣大學:電子工程學研究所廖剛華Liao, Gaug-HuaGaug-HuaLiao2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57337本研究中,我們完成了GaAsSb/GaAs單量子井雷射的製造與特性測試,並與先前研製的雙量子井雷射的特性作分析比較。由於單量子井容雩In this study, GaAsSb/GaAs single-quantum-well (SQW) lasers have been successfully fabricated and characterized. A comparison between SQW lasers and double-quantum-well (DQW) lasers which were previous fabricated is performed. Because the SQW structure of the lasers allows higher strain, we increased the Sb composition of the quantum well and reached 1292nm laser emission. However, the SQW lasers have lower quantum efficiency, higher internal loss, and severer blue shift below threshold. Temperature characteristics of both lasers were also investigated. By measuring the relationship between spontaneous emission intensity and injection current, we analyzed the components of the threshold current. The characteristic temperatures of the SQW and DQW lasers are 54K and 58K, which are closer to those of their Auger components, 32K and 31K, and far below those of their spontaneous components, 148K and 250K. It implies that Auger recombination plays an important role on the temperature characteristics of the lasers especially at high temperature.中文摘要.......................................................................................... Ⅰ Abstract............................................................................................. Ⅱ 目錄 ……………………………………………………………….. Ⅲ 附表索引 …………………………………………………….…... Ⅴ 附圖索引……………………………………...…………………… Ⅵ 第一章 導論 …………………………………………………… 1 第二章 實驗設置、步驟與量測方法 2.1 雷射結構的成長…….………………………………………….. 5 2.2雷射製程………………………………………....………..…….6 2.3量測系統設置………...………………………………………………9 2.3.1光必v-電流量測………………………………………………9 2.3.2 電激螢光光譜量測…………………………………………… 10 2.3.3自發性發光光必v量測……………………………...………. 10 2.3.4 雷射樣品電性量測……………………………………..…… 10 第三章 結果與討論 3.1 GaAsSb/GaAs 單量子井的量測結果與特性………………… 18 3.2 GaAsSb/GaAs 單量子井與雙量子井室溫量測結果與特性之 比較…………………………………………………………….. 21 3.3 GaAsSb/GaAs 單量子井與雙量子井之自發性發光光必v變溫量測結果與特性分析…………………………………………….. 26 3.4 GaAsSb/GaAs 單量子井與雙量子井之熱效應量測結果與特性 之分析比較…………………………………………………….. 30 第四章 結論 ……………………………………………………... 55 參考文獻 …………………………………………………….…….. 56 附表索引 表2.1 R1974雷射結構…………………………………………………12 表2.2 R2244雷射結構…………………………………………………13 表3.1共振腔長度為760μm的寬面積雷射特性………………………33 表3.2 R1974和R2244光電特性比較.....................................................34 表3.3 1998年起世界各研究單位於GaAs1-xSbx/GaAs系列材料之邊 射型雷射發表成果………………………………..………..………35 附圖索引 圖1.1 III-V化合物半導體能隙與晶格常數關係圖…..……………….. 4 圖1.2量子井能帶圖…………………………………...……………….. 4 圖2.1 製程流程示意圖………………………………...………………14 圖2.2 L-I量測系統示意圖………………………..……………………15 圖2.3 EL量測系統示意圖………………………...…..……………….16 圖2.4 自發性發光光必v量測示意圖…………….…………………..17 圖3.1 R2244電流對電壓圖…………………...…….…………………36 圖3.2 R2244電激螢光譜……………………….….…………………..36 圖3.3 位能井與藍移關係的示意圖……………….…………………..37圖3.4 起振電流密度對共振腔長度倒數關係圖……..……………….37 圖3.5 外部量子效率倒數對共振腔長度關係圖…….…….………….38 圖3.6 No.6雷射的光必v對電流關係圖,插圖為EL光譜……..…….38圖3.7 No.10雷射的光必v對電流關係圖,插圖為EL光譜………….39 圖3.8共振腔長度為760μm雷射的顯微鏡鏡面圖…….………..…….40 圖3.9 共振腔長度同為760μm的不同鏡面電激螢光譜….………….41 圖3.10 R1974導電帶能帶示意圖……………..……………...……….41 圖3.11 R2244導電帶能帶示意圖……………..………………….……42 圖3.12 R1974和R2244光必v對電流關係圖,插圖為EL光譜…...…42圖3.13 R1974和R2244外部量子效率倒數對共振腔長度關係圖…...43 圖3.14 R1974和R224波長對注入電流密度關係圖……….…………43 圖3.15 R1974和R224起振波長對共振腔長度關係圖……………….44 圖3.16 R1974和R2244所有元件的波長對注入電流密度關係圖…...44 圖3.17 R1974和R2244基態能量對注入電流密度的1/3次方的關係圖…………………………………………………………45 圖3.18 R1974和R2244起振電流密度對共振腔長度倒數關係圖…...45 圖3.19 R1974和R224增益對起振電流密度的關係圖…………….…46 圖3.20 R1974變溫自發性發光光必v對電流關係圖………………..46 圖3.21 R2244變溫自發性發光光必v對電流關係圖……….……….47 圖3.22 GaAsSb/GaAs雷射之Zth對溫度的關係圖………………….…47 圖3.23 R1974放射性復合、歐傑復合之電流比例對溫度關係圖……48 圖3.24 R2244放射性復合、歐傑復合之電流比例對溫度關係圖……48 圖3.25 R1974放射性復合、歐傑復合之電流比例乘上起振電流密度溫度關係圖…………………………………………………49 圖3.26 R2244放射性復合、歐傑復合之電流比例乘上起振電流密度溫度關係圖…………………………………………………49 圖3.27 R1974 L-I變溫曲線圖…………………………………………50 圖3.28 R2244 L-I變溫曲線圖…...…..………….….………………….50 圖3.29 R1974不同共振腔長度之T0擬合圖………..…………………51 圖3.30 R2244不同共振腔長度之T0擬合圖………..…………………51 圖3.31 R1974和R2244對共振腔長度變化圖…..…………………….52 圖3.32 R1974 T1擬合圖…………………………….………………….52 圖3.33 R2244T1擬合圖…………………………….…………………..53 圖3.34 R1974和R2244T1對共振腔長度關係圖…..………………….53 圖3.35 R1974外部量子效率倒數對共振腔長度變溫關係圖….…….54 圖3.36 R2244外部量子效率倒數對共振986218 bytesapplication/pdfen-US銻砷化鎵/砷化鎵第二型量子井雷射:GaAsSb/GaAstype-II quantum well lasers銻砷化鎵/砷化鎵第二型量子井雷射 製造與特性之研究Fabrication and characterization of GaAsSb/GaAs type-II quantum well lasersthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57337/1/ntu-93-R91943104-1.pdf