劉致為臺灣大學:電子工程學研究所申羽洋Shen, Yu-YangYu-YangShen2010-07-142018-07-102010-07-142018-07-102009U0001-2407200914581200http://ntur.lib.ntu.edu.tw//handle/246246/189253本文中，我們將研究在場效電晶體先進技術發展中三項重要的議題：高介電常數材料、多晶砷化銦和矽鍺量子井。先我們討論使用了不同熱退火溫度下的氧化鋁鉿的金氧半電容元件的材料特性及電特性，我們發現到當氧化鋁鉿薄膜暴露在大氣中會因為水氣的吸收而有電性的退化。著我們研究使用p型參雜的多晶砷化銦為閘極金屬的金氧半電容元件，由實驗結果可知厚度為一微米的多晶砷化銦已可主導閘極金屬的功函數。跟鋁閘極金屬比較，使用p型參雜的多晶砷化銦當作閘極金屬的金氧半電容的臨界電壓有正向的位移，此結果可應用在p型金氧半場效電晶體。後我們分析使用矽鍺量子井結構的蕭特基障礙二極體的電特性。因為電洞累積的關係，空乏區電容及逆向電流都會增加。而且使用傳統的電容電壓方法來得到矽鍺量子井結構的蕭特基障礙二極體的能障高度是不準確的。In this work, we will study three important topics of advanced metal-oxide-semiconductor field-effect transistors technology which are HfAlOx dielectric, poly-InAs gate and SiGe quantum well.he material and electrical properties, ambient stability of the MOS capacitors with HfAlOx dielectric after PDA at different temperature have been studied. We observe the degradation of the electrical properties for the HfAlOx film with exposure to air due to the moisture absorption.he material and electrical characteristics of the MOS capacitors using the p+poly-InAs gate electrodes are discussed. The experimental result confirms that the 1μm poly-InAs is thick enough to dominate the work function of gate electrodes. The threshold voltage (Vth) of the Al/p+ poly-InAs gate devices has positive shift as compared to the control Al gate.he C-V and I-V characteristics of the SiGe quantum well Schottky barrier diode have performed. The holes confinement makes the depletion capacitance and the reverse current increase. And the conventional C-V method can not be used to measure the barrier height of the SiGe quantum well Schottky barrier diodes.Contentsist of Tables VIIIist of Figures IXhapter 1 Introduction.1 Motivation 1.1.1 Characterization of the ultrathin HfAlOx 1.1.2 The flat-band voltage adjustment using the poly-InAs gate electrodes 2.1.3 Electrical characteristics of Si/SiGe/Si Quantum Well Schottky Barrier Diode 2.2 Thesis Organization 3eferences 4hapter 2 Characterization of the ultrathin HfAlOx.1 Introduction 5.2 Experiments 8.3 Results and Discussion 10.3.1 Thermal budget stability 10.3.2 The I-V characteristic comparison of Al gate and Pt gate 19.3.3 Ambient stability 21.4 Conclusion 31eferences 31hapter 3 Flat-band voltage adjustment using the poly-InAs gate electrodes.1 Introduction 34.2 Experiments and Theories 35.2.1 MOS Capacitor Device Fabrication 35.2.2 Extraction of Electrical parameters from C-V curves 37.3 Results and Discussion 39.4 Conclusion 48eferences 49hapter 4 Electrical characteristics of Si/SiGe/Si Quantum Well Schottky Barrier Diode.1 Introduction 50.2 Basic Theory of Schottky Barrier diode 51.2.1 Barrier height definition 51.2.2 Extraction of Ideality factor and barrier height from I-V characteristics 52.2.3 Depletion region 53.3 Experiments 55.4 Results and Discussion 57.5 Conclusion 64eference 64hapter 5 Summary and Future Work.1 Summary 66.2 Future work 671830528 bytesapplication/pdfen-US高介電常數材料砷化銦矽鍺量子井金氧半電容元件High-k materialInAsSiGe quantum wellMOS capacitorthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189253/1/ntu-98-R96943105-1.pdf