Chiang, Yun-ChiYun-ChiChiangYang, Wei-ChenWei-ChenYangHung, Chih-ChienChih-ChienHungErcan, EnderEnderErcanChiu, Yu-ChengYu-ChengChiuLin, Yan-ChengYan-ChengLinWEN-CHANG CHEN2023-01-072023-01-072022-12-2319448244https://scholars.lib.ntu.edu.tw/handle/123456789/627013Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.enacenes; field-effect transistors; floating gate; perovskite quantum dots; photomemoryjournal article10.1021/acsami.2c18064365627382-s2.0-85144953527https://api.elsevier.com/content/abstract/scopus_id/85144953527