The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing

Huang, S.-H.S.-H.HuangLu, F.-L.F.-L.LuHuang, W.-L.W.-L.HuangHuang, C.-H.C.-H.HuangCHEE-WEE LIU2020-06-162020-06-162015https://scholars.lib.ntu.edu.tw/handle/123456789/502120The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealingjournal article10.1109/LED.2015.24789162-s2.0-84946574276https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946574276&doi=10.1109%2fLED.2015.2478916&partnerID=40&md5=998665ee2c249aba64210b79681205f0