C-V and G-V characterization of in-situ fabricated Ga<inf>2</inf>O<inf>3</inf>-GaAs interfaces for inversion/accumulation device and surface passivation applications

Passlack, M.M.PasslackMINGHWEI HONGMannaerts, J.P.J.P.Mannaerts2019-12-272019-12-271996https://scholars.lib.ntu.edu.tw/handle/123456789/443499C-V and G-V characterization of in-situ fabricated Ga<inf>2</inf>O<inf>3</inf>-GaAs interfaces for inversion/accumulation device and surface passivation applicationsjournal article10.1016/0038-1101(96)00006-82-s2.0-0030216999https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030216999&doi=10.1016%2f0038-1101%2896%2900006-8&partnerID=40&md5=8faa48b3fa189e76b8ca8d81e5a0c1d1