Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf>

Huang, M.L.M.L.HuangChang, Y.C.Y.C.ChangChang, C.H.C.H.ChangLee, Y.J.Y.J.LeeChang, P.P.ChangKwo, J.J.KwoWu, T.B.T.B.WuMINGHWEI HONG2019-12-272019-12-27200510.1063/1.2146060https://scholars.lib.ntu.edu.tw/handle/123456789/443456Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf>journal article2-s2.0-29144509765https://www.scopus.com/inward/record.uri?eid=2-s2.0-29144509765&doi=10.1063%2f1.2146060&partnerID=40&md5=71f61ecc5e2e71bba9c92974164db410