Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate

CHEE-WEE LIUMaikap, S.S.MaikapLee, M.H.M.H.LeeChang, S.T.S.T.ChangCHEE-WEE LIU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-34047225367&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332397[SDGs]SDG7Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substratejournal article10.1088/0268-1242/22/4/008