K. J. CheethamA. KrierI. PatelJ. S. TzengHAO-HSIUNG LIN2018-09-102018-09-102011-03https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951776222&doi=10.1088%2f0022-3727%2f44%2f8%2f085405&partnerID=40&md5=52404d750e914f93980b6eee5aaf45b4The Raman spectra of quaternary InAsxSbyP 1-x-y epitaxial layers nominally lattice-matched to (100) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap. © 2011 IOP Publishing Ltd.Alloy compositions; Arsenic concentration; Composition ranges; Compositional range; Gas-source MBE; InAs; InP; Lattice-matched; LO phonons; Longitudinal optical; Miscibility gap; Phonon peaks; Raman spectra; Transverse optical phonons; Alloys; Arsenic; Indium antimonides; Indium arsenide; Raman scattering; Raman spectroscopy; Semiconducting indium; Solubility; Phononsjournal article10.1088/0022-3727/44/8/0854052-s2.0-79951776222WOS:000287195000017