Liao, C. C.C. C.LiaoHo, C. H.C. H.HoHuang, R. T.R. T.HuangChen, F. R.F. R.ChenKai, J. J.J. J.KaiChen, L. C.L. C.ChenMINN-TSONG LINYao, Y. D.Y. D.Yao2018-09-102018-09-10200203048853http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175187300038&KeyUID=WOS:000175187300038http://scholars.lib.ntu.edu.tw/handle/123456789/297648https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036466053&doi=10.1016%2fS0304-8853%2801%2900578-9&partnerID=40&md5=f93d31133b0b4662ce62d1f3ab94e684Spin-dependent tunnel junction, NiFe/CoFe/Al2O3/Co//Si, was fabricated to investigate the thermal stability induced diffusion behaviors. The interfacial diffusion causes the degradation of the ratio of the TMR, the enhancement of the switching field of the two magnetic electrodes, the thickness decrease of the insulator layer, and the increase of the interfacial roughness. The outward diffusion of oxygen from the insulator layer is faster than that of aluminum for samples annealed below 400°C. The degradation of the ratio of TMR is attributed to the disturbance of the spin polarization in the magnetic layers, and the increase of the pinholes and spin-flip effect in the insulator layer. The relative roughness between the two interfaces of the insulator induces the surface magnetic dipoles, and hence, increases the switching field of the ferromagnetic electrodes. © 2002 Elsevier Science B.V. All rights reserved.Interfacial roughness; Spin polarization; Thermal stability; Tunneling magnetoresistanceAnnealing; Diffusion; Electric insulators; Electrodes; Interfaces (materials); Magnetic moments; Magnetoresistance; Polarization; Surface roughness; Thermodynamic stability; Tunneling magnetoresistance (TMR); Tunnel junctionsjournal article10.1016/s0304-8853(01)00578-92-s2.0-0036466053WOS:000175187300038