2018-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/706279摘要：近年來由於可攜式與穿戴式裝置的發展，使系統電路整合於裝置面板的概念日趨重要，為實現兼具多功能、低耗能及輕薄特性的大面積電子，可撓性互補式元件技術的開發成為重要關鍵。近幾年本研究團隊致力於p-型氧化亞錫薄膜電晶體技術研究，成功以p-型氧化亞錫搭配n-型氧化鋅開發可撓性全氧化物互補式反向器與電路。本計畫目標在於將此可撓性互補式電晶體技術進一步建立在錫氧化物單一材料系統上，以提升其實用性與應用價值。在為期三年的計畫中，首先將開發低溫n-型錫氧化物薄膜電晶體，在p與n-型主動層採單一步驟沉積的前提下，計畫以p-型氧化亞錫為出發點，採用「氧化物封蓋層搭配後退火」或是「大氣噴射式電漿處理」來進行n-型化；期間亦將針對n-型化的錫氧化物薄膜特性進行研究。第二年則是將第一年所開發之n-型錫氧化物薄膜電晶體進行撓曲化，為提升元件之可撓曲性，預計將多層複合膜概念應用於電極以及閘極介電層中；此外亦將採用五極場效電晶體結構來研究錫氧化物薄膜電晶體通道的本質特性。最後一年則著重於可撓性p-型與n-型錫氧化物薄膜電晶體的整合，藉此開發可撓性互補式錫氧化物反相器與環型振盪電路等。除了量測分析反相器與振盪器特性曲線外，並將探討機械應變對此互補式電路特性的影響。<br> Abstract: With the recent advances in wearable and ubiquitous devices, large-area electronics possessing features of lightweight, ruggedness, flexibility, and low power consumption are highly desirable. Practical electronic circuits are expected to be implemented with complementary inverters. Therefore, the development of flexible complementary thin-film transistor (TFT) technology becomes crucial. Previously our research team has reported the first demonstration of flexible complementary oxide-TFT-based ring oscillators employing p-type SnO and n-type ZnO. For practical application, using the same material system for p-channel and n-channel is highly desirable. Therefore, the goal of this project is to develop the flexible complementary oxide-TFT-based circuit technology by using tin oxide with a single-step deposition for both p & n channels. In this three-year research project, first we will focus on the characterization of SnOx thin films and development of high performance low-temperature n-channel SnOx TFTs. Using the p-type SnO thin film as a starting point, unipolar n-channel mode will be realized by back-channel capping and/or atmospheric pressure plasma jet treatment. The TFT performance will be correlated with the stoichiometry, crystal structure, and electronic properties of the SnOx thin films as well. Next, we will transfer the n-type SnOx TFT technology from rigid glass substrates to flexible polymeric substrates via a direct fabrication approach, and the performance of the flexible n-type SnOx TFTs under the influence of mechanical strain/deformation will be studied. To investigate the intrinsic properties of the SnOx channels, a five-terminal field-effect transistor structure will also be implemented in additional to the conventional three-terminal geometry to minimize the contact effects. In the last year of the project, we will concentrate on development of flexible tin oxide-based CMOS inverters and fundamental logic circuits by monolithically integrating the flexible n-channel and p-channel SnOx TFTs. In addition, the impact of the mechanical strain/deformation on the circuit performance will be addressed.錫氧化物互補式薄膜電晶體技術可撓性電子tin oxidecomplementary thin-film transistor technologyflexible electronics