Hsieh, Jen-WeiJen-WeiHsiehTsai, Yi-LinYi-LinTsaiLee, Tzao-LinTzao-LinLeeTEI-WEI KUO2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-54049133202&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/340578Flash-memory technology is becoming critical in building embedded systems applications because of its shock-resistant, power economic, and nonvolatile nature. With the recent technology breakthroughs in both capacity and reliability, flash-memory storage systems are now very popular in many types of embedded systems. However, because flash memory is a write-once and bulk-erase medium, we need a translation layer and a garbage-collection mechanism to provide applications a transparent storage service. In the past work, various techniques were introduced to improve the garbage-collection mechanism. These techniques aimed at both performance and endurance issues, but they all failed in providing applications a guaranteed performance. In this paper, we propose a real-time garbage-collection mechanism, which provides a guaranteed performance, for hard real-time systems. On the other hand, the proposed mechanism supports non-real-time tasks so that the potential bandwidth of the storage system can be fully utilized. A wear-leveling method, which is executed as a non-real-time service, is presented to resolve the endurance problem of flash memory. The capability of the proposed mechanism is demonstrated by a series of experiments over our system prototype.application/pdf3966160 bytesapplication/pdfPerformance; Storage managementAlgorithms; Design; Embedded systems; flash memory; garbage collection; real-time system; storage systems[SDGs]SDG9Conformal mapping; Consumer products; Data storage equipment; Embedded systems; Integrated circuits; Configurable; Information storages; Logical block addresses; Mapping methods; Memory managements; Memory overheads; Performance; Performance requirements; Physical addresses; Storage management; Strong demands; System performances; Flash memoryjournal article10.1109/TC.2008.612-s2.0-54049133202