Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric

Chen, C.P.C.P.ChenLin, T.D.T.D.LinLee, Y.J.Y.J.LeeChang, Y.C.Y.C.ChangMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443415Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectricjournal article10.1016/j.sse.2008.06.0062-s2.0-50849107353https://www.scopus.com/inward/record.uri?eid=2-s2.0-50849107353&doi=10.1016%2fj.sse.2008.06.006&partnerID=40&md5=354e3936b2b21291f1c05b297cc59116