Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique

Hwu, J.G.J.G.HwuWang, W.S.W.S.WangJENN-GWO HWU2018-09-102018-09-101986http://www.scopus.com/inward/record.url?eid=2-s2.0-0022718459&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/321886Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature techniquejournal article10.1007/BF00616590