Chen L.C.Yang C.Y.Bhusari D.M.Chen K.H.Lin M.C.Lin J.C.Chuang T.J.LI-CHYONG CHEN2022-08-092022-08-09199609259635https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000140081&doi=10.1016%2f0925-9635%2896%2980070-7&partnerID=40&md5=c2e4e231de9f2744bd8d9972b1816fa9https://scholars.lib.ntu.edu.tw/handle/123456789/616462We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.Carbon nitride;Microwave PECVD;Transmission electron diffraction;X-Ray photoelectron spectroscopyjournal article10.1016/0925-9635(96)80070-72-s2.0-0000140081